型号 SI4862DY-T1-GE3
厂商 Vishay Siliconix
描述 MOSFET N-CH D-S 16V 8-SOIC
SI4862DY-T1-GE3 PDF
代理商 SI4862DY-T1-GE3
标准包装 2,500
系列 TrenchFET®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 16V
电流 - 连续漏极(Id) @ 25° C 17A
开态Rds(最大)@ Id, Vgs @ 25° C 3.3 毫欧 @ 25A,4.5V
Id 时的 Vgs(th)(最大) 600mV @ 250µA
闸电荷(Qg) @ Vgs 70nC @ 4.5V
功率 - 最大 1.6W
安装类型 表面贴装
封装/外壳 8-SOIC(0.154",3.90mm 宽)
供应商设备封装 8-SOICN
包装 带卷 (TR)
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